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P9NK60Z - STP9NK60Z

Description

INTERNAL SCHEMATIC DIAGRAM The SuperMESH™ series is obtained through an DataSheet4U.com extreme optimization of ST’s well established stripbased PowerMESH™ layout.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 DataSheet4U.

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Datasheet Details

Part number P9NK60Z
Manufacturer STMicroelectronics
File Size 702.36 KB
Description STP9NK60Z
Datasheet download datasheet P9NK60Z Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com www.DataSheet4U.com N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 VDSS 600 600 600 600 V V V V RDS(on) < 0.95 < 0.95 < 0.95 < 0.95 ID 7 7 7 7 A A A A Pw 125 W 30 W 125 W 125 W 1 2 STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 Ω Ω Ω Ω 3 s s s s s s s TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 I2PAK 3 12 1 D2PAK DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The SuperMESH™ series is obtained through an DataSheet4U.com extreme optimization of ST’s well established stripbased PowerMESH™ layout.
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