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STMicroelectronics Electronic Components Datasheet

P9NC60FP Datasheet

STP9NC60FP

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STP9NC60
® STP9NC60FP
N - CHANNEL 600V - 0.6- 9A TO-220/TO-220FP
PowerMESHΙΙ MOSFET
www.DataSheet4U.com T YPE
VDSS
R DS ( o n )
ID
STP9NC60
S T P 9 NC6 0F P
600 V
600 V
< 0.75
< 0.75
9.0 A
5.2 A
ν TYPICAL RDS(on) = 0.6
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν NEW HIGH VOLTAGE BENCHMARK
ν GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
ν HIGH CURRENT, HIGH SPEED SWITCHING
ν SWITH MODE POWER SUPPLIES (SMPS)
ν DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
P ara met er
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Volt age (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W it hst and Voltage (DC)
Tstg Storage Temperature
Tj Max. O perating Junction Temperature
() Pulse width limited by safe operating area
February 2000
Value
STP9NC60 STP9NC60FP
600
600
± 30
9.0 5.2
5.7 3.3
36 36
125 40
1.0 0.32
4.5 4.5
2000
-65 to 150
150
(1) ISD 9A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
V
oC
oC
1/9


STMicroelectronics Electronic Components Datasheet

P9NC60FP Datasheet

STP9NC60FP

No Preview Available !

STP9NC60/FP
THERMAL DATA
Rthj- ca se
Rt hj-a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
T O- 220
1.0
T O-220F P
3. 12
62.5
0.5
300
oC/W
oC/W
oC/W
oC
www.DataSheet4U.coAmVALANCHE CHARACTERISTICS
Sy mbo l
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
9
850
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Sy mbo l
V( BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
600
Typ .
Max.
Un it
V
1
50
± 100
µA
µA
nA
ON ()
Sy mbo l
VGS(th )
RDS(on )
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 4 A
Resistance
On Stat e Drain Current VDS > ID(on ) x RDS(on )max
VGS = 10 V
Min.
2
Typ .
3
0.6
Max.
4
0 .7 5
Un it
V
9.0 A
DYNAMIC
Sy mbo l
gfs ()
Cis s
Cos s
Crs s
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
Test Conditions
VDS > ID(on ) x RDS(on )max ID = 4 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ .
10
Max.
Un it
S
1400
196
31
pF
pF
pF
2/9


Part Number P9NC60FP
Description STP9NC60FP
Maker STMicroelectronics
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P9NC60FP Datasheet PDF






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