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STMicroelectronics Electronic Components Datasheet

P9NC60 Datasheet

STP9NC60

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STP9NC60
STP9NC60FP
N-CHANNEL 600V - 0.6- 9A - TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP9NC60
www.DataSheet4U.cSoTmP9NC60FP
600 V
600 V
< 0.75 9.0 A
< 0.75 9.0 A (*)
s TYPICAL RDS(on) = 0.6
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1)
PTOT
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
February 2002
Value
STP9NC60 STP9NC60FP
600
600
±30
9 9 (*)
5.7 5.7 (*)
36 36 (*)
125 40
1.0 0.32
3.5
- 2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
– 55 to 150
°C
(1)ISD 9A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*) Limited only by Maximum Temperature Allowed
1/9


STMicroelectronics Electronic Components Datasheet

P9NC60 Datasheet

STP9NC60

No Preview Available !

STP9NC60 / STP9NC60FP
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
1.0
62.5
300
TO-220FP
3.12
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
www.DataSheet4U.com EAS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
9
850
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.5 A
Min.
2
Typ.
3
0.6
Max.
4
0.75
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS =20 V , ID = 4.5A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
9
1420
205
35
Max.
Unit
S
pF
pF
pF
2/9


Part Number P9NC60
Description STP9NC60
Maker ST Microelectronics
PDF Download

P9NC60 Datasheet PDF






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