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STMicroelectronics Electronic Components Datasheet

P8NS25 Datasheet

STP8NS25

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STP8NS25
STP8NS25FP
N-CHANNEL 250V - 0.38- 8A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP8NS25
www.DataSheet4U.cSoTmP8NS25FP
250 V
250 V
< 0.45
< 0.45
8A
8A
s TYPICAL RDS(on) = 0.38
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
April 2001
Value
STP8NS25
STP8NS25FP
250
250
± 20
8 8(*)
5 5(*)
32 32(*)
80 30
0.64 0.24
5
- 2000
–65 to 150
150
(1) ISD8A, di/dt300 A/µs, VDDV(BR)DSS, TjTjMAX
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/9


STMicroelectronics Electronic Components Datasheet

P8NS25 Datasheet

STP8NS25

No Preview Available !

STP8NS25/STP8NS25FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.56
62.5
0.5
300
TO-220FP
4.11
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
www.DataSheet4U.coVm(BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
ID = 250 µA, VGS = 0
Min.
250
Typ.
Max.
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
0.38
Max.
4
0.45
Unit
V
8A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 4A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
7
Typ.
8
770
118
48
Max.
Unit
S
pF
pF
pF
2/9


Part Number P8NS25
Description STP8NS25
Maker ST Microelectronics
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