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P8NM50 - STP8NM50

General Description

bThe MDmesh™ is a new revolutionary Power - OMOSFET technology that associates the multiple )drain process with the company’s PowerMESH™ t(shorizontal layout.

ucdv/dt and excellent avalanche characteristics.

Key Features

  • Type VDSS (@Tjmax) RDS(on) ID STP8NM50 t(s)STP8NM50FP 550V 550V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STP8NM50 t(s)STP8NM50FP 550V 550V <0.8Ω <0.8Ω 8A 8A (1) c1. Limited only by maximum temperature allowed du■ 100% avalanche tested ro■ High dv/dt and avalanche capabilities P■ Low gate input resistance te■ Low input capacitance and gate charge soleDescription bThe MDmesh™ is a new revolutionary Power - OMOSFET technology that associates the multiple )drain process with the company’s PowerMESH™ t(shorizontal layout. The resulting product has an outstanding low on-resistance, impressively high ucdv/dt and excellent avalanche characteristics.