P8NM50 Datasheet | STMicroelectronics

features Type VDSS (@Tjmax) RDS(on) STP8NM50 t(s)STP8NM50FP 550V 550V <0.8Ω <0.8Ω 8A 8A (1) c1. Limited only by maximum temperature allowed du- 100% avalanche tested ro- High dv/dt and avalanche capabilities P- Low gate input resistance te- Low input capacitance and gate charge sole Description b The MDmesh™ is a new revolutionary Power - OMOSFET technology that associates the multiple )drain process with the pany’s Power MESH™ t(shorizontal layout. The resulting product has an outstanding low on-resistance, impressively high ucdv/dt and excellent avalanche characteristics. The dadoption of the pany’s proprietary strip rotechnique yields overall dynamic performance Pthat is significantly better than that of similar petition’s products. lete Applications Obso- Switching application 3 2 1 TO-220 3 2 1 TO-220FP Internal schematic diagram Order codes Part number STP8NM50 STP8NM50FP Marking P8NM50 P8NM50FP Package TO-220 TO-220FP Packaging Tube Tube October 2006 Rev 7 1/14 .st. Contents Contents STP8NM50 - STP8NM50FP 1 Electrical ratings - - - - - - - - . . . . 3 2 Electrical characteristics - - - - - - - . . 4 2.1 Electrical characteristics...