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STMicroelectronics Electronic Components Datasheet

P8NK80 Datasheet

STP8NK80Z

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STP8NK80Z - STP8NK80ZFP
STW8NK80Z
N-CHANNEL 800V - 1.3- 6.2A TO-220/TO-220FP/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP8NK80Z
STP8NK80ZFP
STW8NK80Z
800 V
800 V
800 V
< 1.5
< 1.5
< 1.5
6.2 A 140 W
6.2 A 30 W
6.2 A 140 W
s TYPICAL RDS(on) = 1.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
STP8NK80Z
P8NK80Z
STP8NK80ZFP
P8NK80ZFP
STW8NK80Z
W8NK80Z
PACKAGE
TO-220
TO-220FP
TO-247
PACKAGING
TUBE
TUBE
TUBE
February 2003
1/11


STMicroelectronics Electronic Components Datasheet

P8NK80 Datasheet

STP8NK80Z

No Preview Available !

www.DataSheet4U.com
STP8NK80Z - STP8NK80ZFP - STW8NK80Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5 KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 6.2A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
Value
STP8NK80Z - STW8NK80Z
800
800
± 30
6.2
3.9
24.8
140
1.12
4000
4.5
-
-55 to 150
STP8NK80ZFP
6.2 (*)
3.9 (*)
24.8 (*)
30
0.24
2500
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
TO-220
TO-220FP
0.89 4.2
62.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
Max Value
6.2
300
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO Gate-Source Breakdown Voltage
Test Conditions
Igs=± 1 mA (Open Drain)
Min.
30
Typ.
TO-247
0.89
50
°C/W
°C/W
°C
Unit
A
mJ
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/11


Part Number P8NK80
Description STP8NK80Z
Maker STMicroelectronics
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P8NK80 Datasheet PDF






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