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P8NK80 - STP8NK80Z

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/11 www. DataS.

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Datasheet Details

Part number P8NK80
Manufacturer STMicroelectronics
File Size 356.42 KB
Description STP8NK80Z
Datasheet download datasheet P8NK80 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com STP8NK80Z - STP8NK80ZFP STW8NK80Z N-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP8NK80Z STP8NK80ZFP STW8NK80Z s s s s s s VDSS 800 V 800 V 800 V RDS(on) < 1.5 Ω < 1.5 Ω < 1.5 Ω ID 6.2 A 6.2 A 6.2 A Pw 140 W 30 W 140 W 3 1 2 TYPICAL RDS(on) = 1.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 TO-220FP 3 2 1 TO-247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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