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STMicroelectronics Electronic Components Datasheet

P8NK100Z Datasheet

STP8NK100Z

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STF8NK100Z
STP8NK100Z
N-CHANNEL 1000V - 1.60- 6.5A - TO-220 - TO-220FP
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
ID
Pw
STF8NK100Z 1000 V <1.856.5 ANote 1 40 W
STP8NK100Z 1000 V <1.856.5 A 160 W
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE RATED
IMPROVED ESD CAPABILITY
VERY LOW INTRINSIC CAPACITANCE
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
stripbased PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
HIGH CURRENT,SWITCHING APPLICATION
IDEAL FOR OFF-LINE POWER SUPPLIES
3
2
1
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Sales Type
STF8NK100Z
STP8NK100Z
Marking
F8NK100Z
P8NK100Z
Package
TO-220FP
TO-220
Packaging
TUBE
TUBE
November 2005
Rev 1
1/13
www.st.com
13


STMicroelectronics Electronic Components Datasheet

P8NK100Z Datasheet

STP8NK100Z

No Preview Available !

1 Electrical ratings
1 Electrical ratings
STF8NK100Z - STP8NK100Z
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS=0)
VDGR Drain-gate Voltage
VGS Gate-Source Voltage
ID Note 1 Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ)
dv/dt Note 3 Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
Table 2. Thermal data
Rthj-case
Rthj-a
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Table 3. Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj= 25°C, ID=IAR, VDD=50V)
TO-220
6.5
4.3
16
160
1.28
--
Value
TO-220FP
1000
1000
± 30
4000
4.5
6.5
4.3
16
40
0.32
2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
TO-220
0.78
62.5
300
TO-220FP
3.1
°C/W
°C/W
°C
Value
6.5
320
Unit
A
mJ
2/13


Part Number P8NK100Z
Description STP8NK100Z
Maker STMicroelectronics
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P8NK100Z Datasheet PDF






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