P6NK60ZPF, P6NK60ZPF_P6NK60 Datasheet - STMicroelectronics

P6NK60ZPF STP6NK60ZPF

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

www.DataSheet4U.com STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 www.datasheet4u.com N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS 600 600 600 600 V V V V RDS(on) < 1.2 < 1.2 < 1.2 < 1.2 Ω Ω Ω Ω ID 6 6 6 6 A A A A Pw 110 W 32 W 110 W 110 W 1 STP6NK60Z STP6NK60ZFP STB6NK60Z STB6NK60Z-1 s s s s s s TYPICAL RDS(on) = 1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD.

P6NK60ZPF Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

P6NK60ZPF, P6NK60ZPF_P6NK60 Datasheet