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STMicroelectronics Electronic Components Datasheet

P4NB100 Datasheet

STP4NB100

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STP4NB100
® STP4NB100FP
N - CHANNEL 1000V - 4- 3.8A - TO-220/TO-220FP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST P4NB1 00
1000 V
STP4NB100FP 1000 V
< 4.4
< 4.4
3.8 A
3.8 A
s TYPICAL RDS(on) = 4
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM () Drain Current (pulsed)
Ptot T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Ts tg Storage Temperat ure
Tj Max. Operating Junction T emperature
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
October 1999
Va l u e
Un it
STP4NB100 ST P4NB100F P
1000
V
1000
V
± 30
V
3.8
3.8(*)
A
2.4
2.4(*)
A
15.2
15.2
A
125 40 W
1
0.32
W /o C
4 4 V/ns
2000
-65 to 150
150
( 1) ISD 3.8A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V
oC
oC
1/9


STMicroelectronics Electronic Components Datasheet

P4NB100 Datasheet

STP4NB100

No Preview Available !

www.DataSheet4U.com
STP4NB100/STP4NB100FP
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
TO-220
1
TO-220FP
3.12
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
3. 8
360
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
1000
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 2 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
3
Typ.
4
4
Max.
5
4.4
Unit
V
3.8 A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 2 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
1.5
Typ.
3
Max.
Unit
S
1400
117
7
pF
pF
pF
2/9


Part Number P4NB100
Description STP4NB100
Maker ST Microelectronics
Total Page 9 Pages
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