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STMicroelectronics Electronic Components Datasheet

P2NC60FP Datasheet

STP2NC60FP

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STP2NC60
STP2NC60FP
N-CHANNEL 600V - 7- 1.9A - TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP2NC60
STP2NC60FP
600 V
600 V
<8
<8
1.9 A
1.9 A
s TYPICAL RDS(on) = 7
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1)
PTOT
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
April 2001
Value
Unit
STP2NC60 STP2NC60FP
600 V
600 V
±30 V
1.9
1.9 (*)
A
1.2
1.2 (*)
A
7.4
7.4 (*)
A
70 30 W
0.56
0.24
W/°C
3.5 V/ns
-
2000
V
–60 to 150
°C
150 °C
(1)ISD 1.9A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*) Limited only by Maximum Temperature Allowed
1/9


STMicroelectronics Electronic Components Datasheet

P2NC60FP Datasheet

STP2NC60FP

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www.DataSheet4U.com
STP2NC60/STP2NC60FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.76
62.5
0.5
300
TO-220FP
4.125
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
1.9
80
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 0.7 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
7
Max.
4
8
Unit
V
1.9 A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 0.7A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
1.25
160
26
3.8
Max.
Unit
S
pF
pF
pF
2/9


Part Number P2NC60FP
Description STP2NC60FP
Maker ST Microelectronics
Total Page 9 Pages
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