P20NM60FP
Features
TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 s s s s
Figure 1: Package
RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A 20 A 20 A TO-220 TO-220FP
VDSS 600 V 600 V 600 V 600 V 600 V
3 1 2
3 1 2 s
TYPICAL RDS(on) = 0.25 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
3 2 1
3 1
TO-247 I²PAK
3 12
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the pany’s Power MESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the pany’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar petition’s products.
D²PAK
Figure 2: Internal Schematic Diagram
APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high...
