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P20NM60FP Datasheet

N-CHANNEL POWER MOSFET

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STP20NM60-STP20NM60FP-STW20NM60
STB20NM60 - STB20NM60-1
N-CHANNEL 600V - 0.25- 20A TO-220/FP/D²/I²PAK/TO-247
MDmesh™ MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
STW20NM60
600 V
600 V
600 V
600 V
600 V
< 0.29
< 0.29
< 0.29
< 0.29
< 0.29
20 A
20 A
20 A
20 A
20 A
s TYPICAL RDS(on) = 0.25
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion’s products.
Figure 1: Package
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
3
2
1
TO-247
123
I²PAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE
STP20NM60
STP20NM60FP
STB20NM60T4
STB20NM60-1
STW20NM60
MARKING
P20NM60
P20NM60FP
B20NM60
B20NM60
W20NM60
February 2005
PACKAGE
TO-220
TO-220FP
D²PAK
I²PAK
TO-247
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
TUBE
Rev.2
1/15
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STMicroelectronics Electronic Components Datasheet

P20NM60FP Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
(1) ISD 20 A, di/dt 400 A/µs, VDD V(BR)/DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Value
TO-220/D²PAK/
I²PAK/TO-247
TO-220FP
600
600
±30
20 20 (*)
12.6 12.6 (*)
80 80 (*)
192 45
1.2 0.36
15
-- 2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
TO-220/D²PAK/
I²PAK/TO-247
0.65
62.5
300
TO-220FP
2.8
Unit
°C/W
°C/W
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max. Value
10
650
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
3 45
RDS(on) Static Drain-source On VGS = 10V, ID = 10 A
Resistance
0.25 0.29
Unit
V
µA
µA
µA
V
2/15
Free Datasheet http://www.datasheet4u.com/


Part Number P20NM60FP
Description N-CHANNEL POWER MOSFET
Maker ST Microelectronics
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P20NM60FP Datasheet PDF






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