P1806
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED
- MOTOR CONTROL
- DC-DC & DC-AC CONVERTERS
- AUTOMOTIVE
- TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE STP1806 MARKING P1806 PACKAGE TO-220 PACKAGING TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k W) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating...
