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P12NB30 Datasheet - ST Microelectronics

P12NB30 STP12NB30

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

P12NB30 Datasheet (108.30 KB)

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P12NB30 STP12NB30 ST Microelectronics

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