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P105N3LL STMicroelectronics (https://www.st.com/) N-channel MOSFET

STMicroelectronics
Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6  $0Y Order code STP105N3LL Table 1. Device summary Marking Packages P105N3LL TO-220 Packaging Tube July 2015 This is information on a product in full production. DocID023976 Rev 3 1/13 www...
Features TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss Figure 1. Internal schematic diagram ' 7$% *  Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using the...

Datasheet PDF File P105N3LL Datasheet 777.33KB

P105N3LL   P105N3LL   P105N3LL  




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