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P105N3LL - N-channel MOSFET

Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Table 1.

Features

  • TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss Figure 1. Internal schematic diagram ' 7$% .
  •  .

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Datasheet Details

Part number P105N3LL
Manufacturer STMicroelectronics
File Size 777.33 KB
Description N-channel MOSFET
Datasheet download datasheet P105N3LL Datasheet
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Full PDF Text Transcription

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STP105N3LL N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package Datasheet − production data Features TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Figure 1. Internal schematic diagram ' 7$% *  Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6  $0Y Order code STP105N3LL Table 1. Device summary Marking Packages P105N3LL TO-220 Packaging Tube July 2015 This is information on a product in full production.
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