P105N3LL datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness .

Application

* Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 techn.

Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 $0Y Order code STP105N3LL Table 1. Device sum.

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