MSC81250M transistors equivalent, rf & microwave transistors.
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REFRACTORYGOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE ME.
The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistanc.
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