MJD117T4 transistors equivalent, complementary power darlington transistors.
* Good hFE linearity
* High fT frequency
* Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
* Linear a.
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
.
TAB 3
1
TO-252 (DPAK)
Figure 1. Internal schematic diagram
R1 typ. = 15 kΩ
R2 typ. = 100 Ω
Table 1. Device summary
Order codes.
Image gallery
TAGS
Download (Size : Direct Link)