MJD112T4 transistors equivalent, complementary power darlington transistors.
* Good hFE linearity
* High fT frequency
* Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
* Linear a.
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
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TAB 3
1
TO-252 (DPAK)
Figure 1. Internal schematic diagram
R1 typ. = 15 kΩ
R2 typ. = 100 Ω
Table 1. Device summary
Order codes.
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