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MJD112T4, MJD112 Complementary power Darlington transistors

MJD112T4 Description

MJD112 MJD117 Complementary power Darlington transistors .
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

MJD112T4 Features

* Good hFE linearity
* High fT frequency

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MJD112T4, MJD112. Please refer to the document for exact specifications by model.

Datasheet Details

Part number
MJD112T4, MJD112
Manufacturer
STMicroelectronics ↗
File Size
Direct Link
Datasheet
MJD112_STMicroelectronics.pdf
Description
Complementary power Darlington transistors
Note
This datasheet PDF includes multiple part numbers: MJD112T4, MJD112.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • MJD112 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • MJD112L - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • MJD117 - PNP Silicon Darlington Transistor (Fairchild Semiconductor)
  • MJD117L - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
  • MJD122 - Epitaxial Planar NPN Transistor (GME)
  • MJD122-1 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (ST Microelectronics)
  • MJD127 - Complementary Darlington Power Transistor (ON Semiconductor)
  • MJD127-1 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (ST Microelectronics)

📌 All Tags

Complementary power Darlington transistors STMicroelectronics
STMicroelectronics MJD112T4-like datasheet