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M93C76-DRE - EEPROM

Download the M93C76-DRE datasheet PDF. This datasheet also covers the M93C46-DRE variant, as both devices belong to the same eeprom family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • Industry standard.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M93C46-DRE-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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M9306 256BIT (16X16) SERIAL NMOS EEPROM ST Microelectronics
M93S46 4Kbit / 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
M93C76-A125 MICROWIRE serial EEPROM
M93C76-R EEPROM
M93C76-W EEPROM
M93C76 MICROWIRE Serial Access EEPROM
M93C46 MICROWIRE Serial Access EEPROM

Full PDF Text Transcription

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M93Cx6-DRE 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE™ serial EEPROM 105 °C operation Datasheet - production data SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width WFDFPN8 (MF) DFN8 - 2 x 3 mm Features • Industry standard MICROWIRE™ bus • Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb • Dual organization: by word (x16) or byte (x8) • Write – Byte within 4 ms – Word within 4 ms • READY/BUSY signal during programming • 2 MHz clock rate • Sequential read operation • Single supply voltage: 1.7 V to 5.5 V • Extended temperature range: -40 °C up to 105 °C • Enhanced ESD protection • Write cycle endurance – 4 million Write cycles at 25 °C – 1.
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