| Description | The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5V VCC supply.For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogramme... |
| Features |
asymmetrically blocked architecture providing system memory integration. The M29F002 has an array of 7 blocks, one Boot Block of 16 KBytes, two Parameter Blocks of 8 KBytes, one Main Block of 32 KBytes and three Main Blocks of 64 KBytes. The memory map is shown in Figure 3. Each block can be erased separately, any combination of blocks can be speci...
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| Datasheet |
 M29F002T Datasheet - 196.29KB |
