Datasheet4U Logo Datasheet4U.com

M28F101 - 1 Mb FLASH MEMORY

General Description

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte.

It is organised as 128K bytes of 8 bits.

It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M28F008 8 MBIT (1 MBIT x 8) FLASH MEMORY Intel Corporation
M28F010 1024K (128K x 8) CMOS FLASH MEMORY Intel Corporation
M28F210 (M28F210 / M28F220) 2M Flash Memory ST Microelectronics
M28F211 (M28F211 / M28F221) 2M Flash Memory ST Microelectronics
M28F220 (M28F210 / M28F220) 2M Flash Memory ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
M28F102 1 Mbit Flash Memory
M28F201 2 Mb FLASH MEMORY
M28F256 256 Kbit Flash Memory
M28F512 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
M28010 1-Mbit 128K x 8 Parallel EEPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 07h DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 128K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface.