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M27256 - NMOS 256K 32K x 8 UV EPROM

General Description

The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM.

It is organized as 32.768 words by 8 bits.

The M27256 is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package.

Key Features

  • a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 VSS 28 1 27 2 26 3 25 4 24 5 23 6 22 7 M27256 21 8 20 9 19 10 18 11 17 12 13 16 14 15 AI00768 VCC A14 A13 A8 A9 A11 G A10 E Q7 Q6 Q5 Q4 Q3 DEVICE.

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M27128A NMOS 128K UV EPROM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V 28 1 FDIP28W (F) DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. The M27256 is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. Figure 1. Logic Diagram VCC VPP 15 A0-A14 8 Q0-Q7 E M27256 Table 1.