LET9150 transistor equivalent, rf power transistor.
* Excellent thermal stability
* Common source configuration push-pull
* POUT = 150 W with 20 dB gain @ 860 MHz
* BeO-free package
Description
The LET9150 .
at frequencies up to 2 GHz.
M246 Epoxy sealed
Figure 1. Pin connection 12
1-2 Drain 4-5 Gate
5
4 3 Source
Table 1.
.
The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz.
M246 Epoxy sealed
Figure 1. Pin connection 12
1-2 Drain 4-5.
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