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LET9150 - RF power transistor

General Description

The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz.

Figure 1.

Table 1.

Key Features

  • Excellent thermal stability.
  • Common source configuration push-pull.
  • POUT = 150 W with 20 dB gain @ 860 MHz.
  • BeO-free package.

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Other Datasheets by STMicroelectronics

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LET9150 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 150 W with 20 dB gain @ 860 MHz ■ BeO-free package Description The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. M246 Epoxy sealed Figure 1. Pin connection 12 1-2 Drain 4-5 Gate 5 4 3 Source Table 1. Device summary Order code LET9150 Package M246 December 2010 Doc ID 16369 Rev 6 Branding LET9150 1/12 www.st.com 12 Contents Contents LET9150 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.