LET9120M transistor equivalent, rf power transistor.
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Excellent thermal stability Common source configuration push-pull POUT = 120 W with 18 dB gain @ 860 MHz Internal input matching BeO-free p.
at frequencies up to 1.0 GHz.
M252 Epoxy sealed
Figure 1.
Pin connection
1
2
3 5
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1. Drain 2.
The LET9120M is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.
M252 Epoxy sealed
Figure 1.
Pin connection
1
2
3 5
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