LET20015
LET20015 is RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package manufactured by STMicroelectronics.
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 applications
- EXCELLENT THERMAL STABILITY
- MON SOURCE CONFIGURATION
- POUT = 15 W with 11 dB gain @ 2000 MHz
- ESD PROTECTION
- IS-97 CDMA PERFORMANCES POUT = 2.5 W EFF. = 20 % DESCRIPTION The LET20015 is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 26 V in mon source mode at frequencies up to 2 GHz. LET20015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic...
