LET20015 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

STMicroelectronics

General Description

The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 26 V in common source mode at frequencies up to 2 GHz.

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LET20015 rf power transistors ldmos enhanced technology in plastic package by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	LET20015
Manufacturer	STMicroelectronics
File Size	67.53 KB
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Datasheet	LET20015 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 2.5 W EFF. = 20 % DESCRIPTION The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.