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LET20015 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Datasheet Summary

Description

The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 26 V in common source mode at frequencies up to 2 GHz.

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Datasheet Details

Part number LET20015
Manufacturer STMicroelectronics
File Size 67.53 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Datasheet download datasheet LET20015 Datasheet
Additional preview pages of the LET20015 datasheet.

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Full PDF Text Transcription

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LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 2.5 W EFF. = 20 % DESCRIPTION The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
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