GP20V60DF
Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
Key Features
- Maximum junction temperature: TJ = 175 °C
- Very high speed switching series
- Tail-less switching off
- Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
- Tight parameters distribution
- Safe paralleling
- Low - Very fast soft recovery antiparallel diode
- Lead free package
