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GP20V60DF - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Very high speed switching series.
  • Tail-less switching off.
  • Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.
  • Lead free package.

📥 Download Datasheet

Datasheet preview – GP20V60DF

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Full PDF Text Transcription

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STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB 3 2 1 TO-220 3 1 D²PAK TAB 3 2 1 TO-247 3 2 1 TO-3P Figure 1. Internal schematic diagram Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.
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