GP19NC60K igbt equivalent, short circuit rugged igbt.
* Low on-voltage drop (VCE(sat))
* Low Cres / Cies ratio (no cross conduction susceptibility)
* Short circuit withstand time 10 µs
* IGBT co-packaged w.
t(s
* High frequency inverters uc
* Motor drivers rodDescription te PThis IGBT utilizes the advanced PowerMESH™
pr.
te PThis IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
lebetween switching performance and low on-state sobehavior.
1
TO-220
D2PAK
Figure 1. Internal schematic diagram
lete Product(s) - ObTable 1. Device summar.
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