GP10HF60KD Key Features
- Low on-voltage drop (VCE(sat))
- Operating junction temperature up to 175 °C
- Low Cres / Cies ratio (no cross conduction
- Part: GP10HF60KD
- Manufacturer: STMicroelectronics (official site)
- Size: 449.33 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| GP100N30 | IGBT |
| GP10NB37LZ | internally clamped IGBT |
| GP10NB60S | low drop IGBT |
| GP10NB60SD | low drop IGBT |
| GP10NC60HD | very fast IGBT |
GP10HF60KD Description
cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The robination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the product ideal for diverse high voltage applications operating at high Obsolefrequencies. Internal schematic diagram Table.