GP10HF60KD
Overview
- Low on-voltage drop (VCE(sat))
- Operating junction temperature up to 175 °C
- Low Cres / Cies ratio (no cross conduction )susceptibility) t(s
- Tight parameter distribution uc
- Ultrafast soft-recovery antiparallel diode d
- Short-circuit rugged ProApplications lete
- Motor drives o
- High frequency inverters bs
- SMPS and PFC in both hard switch and Oresonant topologies t(s) -Description cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The rocombination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the product ideal for diverse high voltage applications operating at high Obsolefrequencies. 3 2 1 TO-220FP TAB 3 2 1 TO-220 3 1 D²PAK Figure
- Internal schematic diagram Table
