GD6NC60H igbt equivalent, igbt.
Type
VCES
VCE(sat)Max @25°C
IC @100°C
STGD6NC60H 600V <2.5V
7A
t(s)
* Low on voltage drop (Vcesat) c
* Low CRES / CIES ratio (no cross-conduction ususceptibi.
P t(s)
* High frequency inverters te c
* SMPS and PFC in both hard switch and le uresonant topologies so rod
* .
le duUsing the latest high voltage technology based on so roa patented strip layout, STMicroelectronics has b Pdesigned an advanced family of IGBTs, the - O tePowerMESH™ IGBTs, with outstanding
performances. The suffix “H” identifies a family
) leopt.
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