Datasheet Summary
STGB40H65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
- production data
2 3
1 D²PAK
Figure 1: Internal schematic diagram C(2, TAB)
G(1)
E(3)
Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.)
@ IC = 40 A
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
Applications
- Photovoltaic inverters
- High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between...