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GB40H65FB - Trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number	GB40H65FB
Manufacturer	STMicroelectronics
File Size	824.12 KB
Description	Trench gate field-stop IGBT
Datasheet	GB40H65FB-STMicroelectronics.pdf

GB40H65FB Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A.
Tight parameter distribution.
Safe paralleling.
Low thermal resistance.

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Published: Jan 21, 2019 |