GB30V60DF igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ.) @ IC = 30 A
* Tight parameters distribution
* Safe pa.
* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction
* Very h.
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficie.
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