G60V60DF igbt equivalent, trench gate field-stop igbt.
* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ.) @ IC = 60 A
* Tight parameter distribution
* Safe par.
* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction
* Very h.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficien.
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