Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Features
- Maximum junction temperature: TJ = 175 °C.
- Tail-less switching off.
- VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
- Tight parameter distribution.
- Safe paralleling.
- Low thermal resistance.
- Very fast soft recovery antiparallel diode
3 2 1
TO-3P
Figure 1. Internal schematic diagram
C (2 or TAB).