G60V60DF
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure
Key Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 60 A
- Tight parameter distribution
- Safe paralleling
Applications
- Photovoltaic inverters
