G30M65DF2 datasheet, igbt equivalent, STMicroelectronics

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Features and benefits

* 6 µs of minimum short-circuit withstand time
* VCE(sat) = 1.55 V (typ.) @ IC = 30 A
* Tight parameters distribution
* Safer paralleling
* Low therma.

Application

* Motor control
* UPS
* PFC Description This device is an IGBT developed using an advanced proprietary trenc.

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where lo.

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