Datasheet4U Logo Datasheet4U.com

G10M65DF2 - Trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Features

  • 6 µs of short-circuit withstand time.
  • VCE(sat) = 1.55 V (typ. ) @ IC = 10 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Soft and very fast recovery antiparallel diode.
  • Maximum junction temperature: TJ = 175 °C.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
G1000LL250 Anode-Shorted Gate Turn-Off Thyristor IXYS
G1000LM250 Anode-Shorted Gate Turn-Off Thyristor IXYS
G1000NC450 Anode Shorted Gate Turn-Off Thyristor IXYS
G1000NL450 Anode Shorted Gate Turn-Off Thyristor IXYS
G1000QC250 Anode Shorted Gate Turn-Off Thyristor IXYS

Other Datasheets by STMicroelectronics

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 10 A  Tight parameter distribution  Safer paralleling  Positive VCE(sat) temperature coefficient  Low thermal resistance  Soft and very fast recovery antiparallel diode  Maximum junction temperature: TJ = 175 °C Applications  Motor control  UPS  PFC  General purpose inverter Order code STGB10M65DF2 Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
Published: |