FERD40U50C
Features
- ST advanced rectifier process
- Stable leakage current over reverse voltage
- Reduced leakage current
- Low forward voltage drop
- High frequency operation
- Insulated package: TO-220FPAB
- Insulating voltage: 2000 VRMS sine
Field effect rectifier
- production data
Description
This dual rectifier is based on a proprietary technology that achieved the best in class VF/IR for a given silicon surface.
Packaged in TO-220FPAB, this device is intended to be used in rectification and freewheeling operations in switch-mode power supplies.
Table 1. Device summary
Symbol
Value
IF(AV) VRRM Tj (max) VF(typ)
2 x 20 A 50 V
+175 °C 0.43 V
June 2015
This is information on a product in full production.
Doc ID027943 Rev 1
1/8
.st.
Characteristics
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms...
