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FERD20H100S Datasheet

Manufacturer: STMicroelectronics
FERD20H100S datasheet preview

Datasheet Details

Part number FERD20H100S
Datasheet FERD20H100S-STMicroelectronics.pdf
File Size 251.31 KB
Manufacturer STMicroelectronics
Description 100V field-effect rectifier diode
FERD20H100S page 2 FERD20H100S page 3

FERD20H100S Overview

The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced.

FERD20H100S Key Features

  • ST advanced rectifier process
  • Stable leakage current over reverse voltage
  • Reduced leakage current
  • Low forward voltage drop
  • High frequency operation
  • Insulated package TO-220FPAB
  • Insulated voltage: 2000 VRMS sine
  • ECOPACK2 pliant ponent
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