F2HNK60Z datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order codes VDS RDS(on) max. ID STF2HNK60Z 600 V 4.8 Ω 2A
* 100% avalanche tested
* Gate charge minimized
* Very low intrinsic capacitance
* Zene.

Application

* Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed.

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this devic.

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