F21NM50N Datasheet | STMicroelectronics

STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET General Features Type VDSS (@Tjmax) RDS(on) ID STB21NM50N )STB21NM50N-1 t(sSTF21NM50N cSTP21NM50N uSTW21NM50N 550V 550V 550V 550V 550V < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω 18A 18A 18A(1) 18A 18A rod1. Limited by wire bonding P- 100% avalanche tested te- Low input capacitance and gate charge le- Low gate input resistance bsoDescription - OThe devices are realized with the second )generation of MDmesh Technology. This t(srevolutionary Power MOSFET associates a new cvertical structure to the pany's strip layout to uyield one of the world's lowest on-resistance and dgate charge. It is therefore suitable for the most rodemanding high efficiency converters te PApplications Obsole- Switching application 3 2 1 TO-220 3 2 1 TO-220FP 3 1 D2PAK 123 I2PAK TO-247 Internal schematic diagram Order codes Part number...