F11NM80 mosfet equivalent, n-channel power mosfet.
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Type
VDSS 800 V 800 V 800 V
RDS(on) < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω
RDS(on)*Qg 14Ω*nC 14Ω*nC 14Ω*nC 14Ω*nC
ID 11 A 11 A 11 A 11 A
3 1
STB11N.
Figure 1.
Internal schematic diagram
Description
The MDmesh™ associates the multiple drain process with the Company’s.
The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significa.
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