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ESDALC6V1P6 Datasheet

QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION

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® ESDALC6V1P6
QUAD LOW CAPACITANCE TRANSIL™ ARRAY
ASD™
FOR ESD PROTECTION
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
Printers
Communication systems and cellular phones
Video equipment
This device is particularly adapted to the
protection of symmetrical signals.
FEATURES
4 Unidirectional Transil™ functions
Breakdown voltage VBR = 6.1 V min.
Low diode capacitance (12pF @ 0V)
Low leakage current < 500 nA
Very small PCB area < 2.6 mm2
SOT-666IP
(Internal Pad)
FUNCTIONAL DIAGRAM
DESCRIPTION
The ESDALC6V1P6 is a monolithic array
designed to protect up to 4 lines against ESD
transients.
The device is ideal for situations where board
space saving is required.
I/O1
GND
I/O2
BENEFITS
High ESD protection level
High integration
Suitable for high density boards
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2 level 4:
15kV (air discharge)
8kV (contact discharge)
MIL STD 883E-Method 3015-7: class3
25kV HBM (Human Body Model)
Order Codes
Part Number
ESDALC6V1P6
Marking
D
I/O4
GND
I/O3
July 2004
REV. 3
1/9


STMicroelectronics Electronic Components Datasheet

ESDALC6V1P6 Datasheet

QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION

No Preview Available !

ESDALC6V1P6
ABSOLUTE RATING (Tamb = 25°C)
Symbol
Parameter
VPP ESD discharge
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
PPP Peak pulse power (8/20µs) (see note 1) Tj initial = Tamb
Tj Junction temperature
Tstg Storage temperature range
TL Maximum lead temperature for soldering during 10 s at 5mm for case
Top Operating temperature range
Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit.
Value
± 15
±8
30
125
-55 to +150
260
-40 to +125
Unit
kV
W
°C
°C
°C
°C
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a) Junction to ambient on printed circuit on recommended pad layout
Value
220
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VCL Clamping voltage
IRM Leakage current
IPP Peak pulse current
αT Voltage temperature coefficient
VF Forward voltage drop
C Capacitance
Rd Dynamic resistance
VCL VBR VRM
I
IF
VF
IRM
Slope: 1/Rd
IPP
V
Part Number
ESDALC6V1P6
VBR
min. max.
VV
6.1 7.2
@ IR
mA
1
IRM @ VRM
max.
µA V
0.5 3
Rd αT
C
typ. max. typ.
@ 0V
10-4/°C pF
1.5 4.5
12
2/9
®


Part Number ESDALC6V1P6
Description QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION
Maker STMicroelectronics
Total Page 9 Pages
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