ESDA8V2-1J Datasheet | STMicroelectronics

Features - Breakdown voltage VBR = 8.2 V - Unidirectional device - High peak power dissipation: 500 W (8/20 µs waveform) - ESD protection level better than IEC 61000-4-2, level 4: 30 k V contact discharge - Low leakage current (< 0.5 µA @ 5 V) Benefits - High EOS and ESD protection level - High integration - Suitable for high density boards plies with the following standards: - IEC 61000-4-2 level 4 - ±15 k V (air discharge) - ±8 k V (contact discharge) - MIL STD 883G - Method 3015-7: class 3B - HBM (human body model): ≥8k V Applications This product is particularly remended for the protection of power supply lines of portable devices, where EOS and ESD transient overvoltage protection in sensitive equipment is required, such as: - puters - Printers - munication systems - Cellular phone handsets and accessories - Video equipment SOD-323 Figure 1. Functional diagram (top view) Description The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages. TM: Transil is a trademark of STMicroelectronics August 2009 Doc ID 15646 Rev 1 1/7 .st. Characteristics Characteristics Table 1. Absolute maximum ratings (Tamb = 25...