ESDA8V2-1J - EOS and ESD Transil protection

ST Microelectronics

ESDA8V2-1J Datasheet Preview — Preview of ESDA8V2-1J PDF

Datasheet Details

Part number	ESDA8V2-1J
Manufacturer	STMicroelectronics ↗
File Size	132.50 KB
Description	EOS and ESD Transil protection
Datasheet	ESDA8V2-1J_STMicroelectronics.pdf

ESDA8V2-1J Product details

Description

The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.

Features

Breakdown voltage VBR = 8.2 V.
Unidirectional device.
High peak power dissipation: 500 W (8/20 µs waveform).
ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge.
Low leakage current (< 0.5 µA @ 5 V) Benefits.
High EOS and ESD protection level.
High integration.
Suitable for high density boards Complies with the following standards:.
IEC 61000-4-2 level 4.
±15 kV (air discharge).
±8 kV (contact discharge).

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Published: Sep 18, 2009 |