DALC208 Datasheet | STMicroelectronics

DESCRIPTION The DALC208SC6 diode array is designed to protect ponents which are connected to data and transmission lines from overvoltages caused by electrostatic discharge (ESD) or other transients. It is a rail-to-rail protection device also suited for overshoot and undershoot suppression on sensitive logic inputs. The low capacitance of the DALC208SC6 prevents from significant signal distortion. FEATURES PROTECTION OF 4 LINES PEAK REVERSE VOLTAGE: VRRM = 9 V per diode VERY LOW CAPACITANCE PER DIODE: C < 5 p F VERY LOW LEAKAGE CURRENT: IR < 1 µA BENEFITS Cost-effectiveness pared to discrete solution High efficiency in ESD suppression No significant signal distortion thanks to very low capacitance High reliability offered by monolithic integration Lower PCB area consumption versus discrete solution SOT23-6L (SC74) FUNCTIONAL DIAGRAM I/O 1 I/O 4 REF 2 REF 1 I/O 2 I/O 3 PLIES WITH THE FOLLOWING STANDARDS : IEC 1000-4-2 level 4 MIL STD 883C - Method 3015-6 (human body test) class 3 February 1999 - Ed: 3A 1/10 DALC208SC6 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C). Symbol VPP VRRM ∆VREF VIn max. VIn min. IF IFRM IFSM Parameter IEC1000-4-2, air discharge IEC1000-4-2, contact discharge Peak reverse voltage per diode Reference voltage gap between VREF2 and VREF1 Maximum operating signal input voltage Minimum operating signal input voltage Continuous forward current (single diode loaded) Repetitive peak forward current (tp = 5 µs, F = 50 k Hz) Surge non repetitive forward current rectangular waveform (see curve on figure 1) tp = 2.5 µs tp = 1 ms tp = 100 ms Storage temperature range Maximum junction temperature Value 15 8 9 9 VREF2 VREF1 200 700 Unit k V V V V V m A m A 6 2 1 -55 to + 150 150 Tstg Tj °C °C THERMAL RESISTANCE Symbol Rth(j-a) Junction to ambient (note 1) Parameter Value 500 Unit °C/W Note 1: device mounted on FR4 PCB with remended footprint dimensions. ELECTRICAL CHARACTERISTICS (Tamb = 25°C). Symbol VF IR C Parameter Forward voltage Reverse...