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STMicroelectronics Electronic Components Datasheet

D30NF06L Datasheet

STD30NF06L

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STD30NF06L
N-CHANNEL 60V - 0.022- 35A DPAK/IPAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD30NF06L
60 V <0.02835 A
s TYPICAL RDS(on) = 0.022
s EXCEPTIONAL dv/dt CAPABILITY
s LOGIC LEVEL GATE DRIVE
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
s ADD SUFFIX “-1” FOR ORDERING IN IPAK
s CHARACTERIZATION ORIENTED FOR
AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
3
2
1
IPAK
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Operating Junction Temperature
(q) Pulse width limited by safe operating area
July 2002
Value
60
60
± 20
35
25
140
70
0.46
25
Unit
V
V
V
A
A
A
W
W/°C
V/ns
– 55 to 175
°C
(1) ISD 38A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.
1/10


STMicroelectronics Electronic Components Datasheet

D30NF06L Datasheet

STD30NF06L

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STD30NF06L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
2.14
100
275
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
35
150
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 5 V, ID = 18 A
VGS = 10 V, ID = 18 A
Min.
1
Typ.
1.7
0.025
0.022
Max.
2.5
0.03
0.028
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > =15 V , ID =15 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
Typ.
25
1600
215
60
Max.
Unit
S
pF
pF
pF
2/10


Part Number D30NF06L
Description STD30NF06L
Maker ST Microelectronics
Total Page 10 Pages
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