D17N06 Datasheet - STMicroelectronics

D17N06 STD17N06

STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD17N05 STD17N06 VDSS 50 V 60 V R DS( on) < 0.085 Ω < 0.085 Ω ID 17 A 17 A s TYPICAL RDS(on) = 0.06 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION s THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) s SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN.

D17N06 Datasheet (178.07 KB)