Datasheet4U Logo Datasheet4U.com

D12NF06 - N-Channel Power MOSFET

General Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Key Features

  • Order code VDS RDS(on) max. ID STD12NF06T4 60 V 0.1 Ω 12 A.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
D1200 NPN Silicon Transistor ROHM
D12000W Standard Recovery Diode nELL
D1201 Rectifiers RCA
D1201A Rectifiers RCA
D1201B Rectifiers RCA

Other Datasheets by STMicroelectronics

Part Number Description
D12NF06L N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD12NF06T4 Datasheet N-channel 60 V, 80 mΩ typ., 12 A, STripFET II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code VDS RDS(on) max. ID STD12NF06T4 60 V 0.1 Ω 12 A • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications PTOT 30 W G(1) S(3) AM01475v1_noZen Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.