logo

D1047 STMicroelectronics (https://www.st.com/) NPN Transistor

STMicroelectronics
Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SD1047 April 2011 Marking 2SD1047 Package TO-3P Doc ID 018729 Rev 1 Packaging Tube 1/10 www.st.com 10 Electrical ratings 1 Electr...
Features
■ High breakdown voltage VCEO = 140 V
■ Typical ft = 20 MHz
■ Fully characterized at 125 oC Application
■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic ...

Datasheet PDF File D1047 Datasheet 159.12KB

D1047   D1047   D1047  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map