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2SD1047
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC
Application
■ Power supply
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
3 2 1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary Order code 2SD1047
April 2011
Marking 2SD1047
Package TO-3P
Doc ID 018729 Rev 1
Packaging Tube
1/10
www.st.com
10
Electrical ratings
1 Electrical ratings
Table 2.
D1047 Datasheet
