BULD742C datasheet, transistor equivalent, STMicroelectronics

Features and benefits

* Low spread of dynamic parameters
* High voltage capability
* Minimum lot-to-lot spread for reliable operation
* Very high switching speed Applications <.

Application

* Electronic ballast for fluorescent lighting
* Switch mode power supplies Description The device is manufacture.

Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand.

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