BUL1101E datasheet, transistor equivalent, STMicroelectronics

BUL1101E transistor equivalent, high voltage fast-switching npn power transistor.

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Application

s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial.

Description

The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a w.

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