BUH515
BUH515 is HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR manufactured by STMicroelectronics.
DESCRIPTION
The BUH515 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature o
Value 1500 700 10 8 12 5 8 50 -65 to 150 150
Uni t V V V A A A A W o o
C C 1/7
November 1999
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.5 o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 m A 700 Tj = 125 C o
Min.
Typ .
Max. 0.2 2 100
Un it m A m A µA V
V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat )∗ V BE(s at)∗ h F E∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time
I E = 10 m A IC = 5 A IC = 5 A IC = 5 A IC = 5 A I B = 1.25 A I B = 1.25 A V CE = 5 V V CE = 5 V
10 1.5 1.3 6 4 2.7 190 2.3 350 12
T j = 100 o C ts tf ts tf
V CC = 400 V I B1 = 1.25 A IC = 5 A I B1 = 1.25 A
IC = 5 A IB2 = 2.5 A
3.9 280
µs ns µs ns f = 15625 Hz IB2 = -1.5 A π V c eflybac k = 1050 sin 106 t V 5 I C = 5A I B1 = 1.25 A f = 31250 Hz IB2 = -1.5 A π 6 V c eflybac k = 1200 sin 10 t 5 ts tf
INDUCTIVE LO AD Storage Time Fall Time
2.3 200
µs ns
∗ Pulsed: Pulse duration = 300...
