BN15D100 transistor equivalent, npn transistor.
* Good hFE linearity
* High fT frequency
* Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
* Linear a.
The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
TAB
3 1
D²PAK
Figure 1. Internal schematic diagrams
R1 = 8 kΩ R2 = 150 Ω
Table 1. Device summary Order code
2STBN15D100T4
Marking B.
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