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STMicroelectronics Electronic Components Datasheet

BCP55 Datasheet

MEDIUM POWER AMPLIFIER

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BCP55/56
MEDIUM POWER AMPLIFIER
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
s PNP COMPLEMENTS ARE BCP52 AND
BCP53 RESPECTIVELY
ADVANCE DATA
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEO
VCER
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE = 1K)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < ms)
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. Operating Junction Temperature
October 1997
Value
BCP55
BCP56
60 100
60 80
60 100
5
1
1.5
0.1
0.2
2
-65 to 150
150
Unit
V
V
V
V
A
A
A
A
W
oC
oC
1/4


STMicroelectronics Electronic Components Datasheet

BCP55 Datasheet

MEDIUM POWER AMPLIFIER

No Preview Available !

BCP55/56
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient
Rthj-tab Thermal Resistance Junction-Collecor Tab
Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
Max
Max
62.5
8
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
V(BR)CBO
Collector Cut-off
Current (IE = 0)
Collector-Base
Breakdown Voltage
(IE = 0)
VCB = 30 V
VCB = 30 V
IC = 100 µA
for BCP55
for BCP56
Tj = 125 oC
V(BR)CEOCollector-Emitter
Breakdown Voltage
(IB = 0)
IC = 20 mA
for BCP55
for BCP56
V(BR)CER
V(BR)EBO
VCE(sat)
Collector-Emitter
Breakdown Voltage
(RBE = 1 K)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
IC = 100 µA
for BCP55
for BCP56
IC = 10 µA
IC = 500 mA IB = 50 mA
VBE(on)
hFE
Base-Emitter On
Voltage
DC Current Gain
IC = 500 mA VCE = 2 V
IC = 5 mA
IC = 150 mA
IC = 150 mA
IC = 150 mA
IC = 500 mA
VCE = 2 V
VCE = 2 V
VCE = 2 V
VCE = 2 V
VCE = 2 V
for Gr. 6
for Gr. 10
for Gr. 16
fT Transition Frequency IC = 10 mA VCE = 5 V f = 35 MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min.
60
100
60
80
60
100
5
25
40
63
100
25
Typ.
130
Max.
100
10
0.5
1
100
160
250
Unit
nA
µA
V
V
V
V
V
V
V
V
V
MHz
2/4


Part Number BCP55
Description MEDIUM POWER AMPLIFIER
Maker STMicroelectronics
Total Page 4 Pages
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