BCP55 Datasheet | STMicroelectronics

BCP55/56 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP PLEMENTS ARE BCP52 AND BCP53 RESPECTIVELY SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V CER V EBO IC I CM IB I BM P tot T stg Tj Parameter BCP55 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE = 1K Ω ) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature 60 60 60 5 1 1.5 0.1 0.2 2 -65 to 150 150 Value BCP56 100 80 100 V V V V A A A A W o o Unit October 1997 1/4 BCP55/56 THERMAL DATA R t hj-amb - R thj-tab - Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W - Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 30 V V CB = 30 V I C = 100 µ A for BCP55 for BCP56 I C = 20 m A for BCP55 for BCP56 I C = 100 µ A for BCP55 for BCP56 I C = 10 µ A T j = 125 o C 60 100 60 80 60 100 5 Min. Typ. Max. 100 10 Unit n A µA V V V V V V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CER Collector-Emitter Breakdown Voltage (R BE = 1 K Ω ) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain V (BR)EBO V CE(sat) ∗ V BE(on) ∗ h FE ∗ I C = 500 m A I C = 500 m A IC IC IC IC IC = = = = = 5 m A 150 m A 150 m A 150 m A 500 m A I B = 50 m A V CE = 2 V V CE = 2 V V CE = 2 V for Gr. 6 V CE = 2 V for Gr....